Preparations for the AI Khan Lab at UC Berkeley EECS, including space renovation and group formation, are underway (Jun 2025). Interested in joining our lab? Learn more here.

• Asir gave invited talks at Samsung Semiconductor and SK Hynix (May 2025).

• Asir delivered several invited talks including at Bangladesh University of Engineering and Technology, Dhaka University, and Brac University at Bangladesh.

• Asir Khan delivered invited technical seminars at UC Berkeley EECS, Princeton ECE, UT Austin ECE, UCLA MSE, Purdue ECE, and Yale ECE (Feb. 2025- Apr. 2025)

• Our latest work on low-resistance semimetals has been covered by IEEE Spectrum (Mar 2025)

• Asir Khan delivered an invited colloquium seminar at the University of Washington, ECE (Feb. 2025)

• Our new Science paper on low resistance topological semimetal is highlighted by a Stanford News story (Jan. 2025)

The story is also picked up by Phys.org, physicsworld, EurekAlert!, AzoNano, and various other news outlets

• Our latest work on reduced electrical resistivity in topological semimetal is published in Science Magazine (Jan. 2025) (Free access here)

• Undergraduate Mentee Harmon Gault wins the SUPREME Undergraduate Microelectronics Fellow award (Nov 2024).

• Asir Khan delivered an invited MSE seminar at the Department of Materials Science and Engineering, University of Maryland (Oct 2024).

• Asir Khan delivered an invited seminar at the Singapore University of Technology and Design (Sept. 2024). 

• Attended NextProf Nexus 2024 (Aug 2024).

• Our new work on superlattice materials for a 'universal' memory is described in a Stanford School of Engineering news story (Feb 2024). IEEE Spectrum also covered our work (Mar 2024).

• Asir Intisar Khan served as a session chair at MRS Fall 2023, Symposium 1D and 2D Materials—Electronic Properties and Device Applications); Session: EL07.12: 1D and 2D Materials—Memory Devices and Neuromorphic Computing (Dec 2023).

• Asir Intisar Khan is awarded the Best Presenter Award in the Electronic Materials and Photonics Division at AVS69 Conference (Nov 2023).

• Asir Khan gave an invited talk at EPCOS 2023 and at IBM Research, Zurich (Oct 2023).

• Asir Khan wins a Best Student Presenter Award at TechCon 2023 (Sept. 2023).

• Asir Khan joined EECS, University of California, Berkeley as a Postdoctoral Scholar (Sept. 2023)

• Asir Khan received his PhD in Electrical Engineering from Stanford University (August 2023).

• Asir Khan received the AVS Russell & Sigurd Varian Award for his work on "novel materials for low-power memory and energy-efficient nanoelectronics" (August 2023)

• Asir Intisar Khan offered an invited colloquium seminar at Physics & Astronomy colloquia at San Francisco State University (2023). "Superlattice and Nanocomposite Chalcogenides for Energy Efficient Phase-Change Memory"

• Asir Khan received the 2022 MRS Fall Meeting Gold Student Award (2022)

He also received the Best Student Presenter Award at the 2022 MRS Fall Meeting, for the talk "Chalcogenide-Superlattice Interfaces and Intermixing Modulating Phase-Change Memory Performance"

And here is the Stanford EE news story, about both awards.

•  Asir Khan delivered an invited tutorial talk at 2022 IEEE Integrated Reliability Workshop (IIRW) (2022). "Reliability of Energy-Efficient Phase Change Memory Based on Novel Superlattices and Nanocomposites"

• Asir Khan offered an invited colloquium seminar at Materials Science and Engineering, University of Texas at Dallas (2022). "Superlattice and Nanocomposite Chalcogenides for Energy Efficient Phase-Change Memory"

• Asir Khan offered a seminar on energy-efficient phase-change memory at IBM TJ Watson Research Center, NY (2022).

• Asir Khan and Xiangjin Wu's work on the interface-controlled low resistance drift in phase-change memory is highlighted on the Cover of IEEE Electron Device Letters (2022). 

• Asir Khan receives the IEEE EDS PhD Student Fellowship (2022)

 Stanford Electrical Engineering department also puts out a press release

• Asir Khan wins Best Student Paper Award at the IEEE VLSI Symposium (2022). Here is the Stanford EE news story.

• Asir Khan is awarded a travel grant at the IEEE VLSI Symposium (2022)

• Asir Khan's work is selected as a conference highlight at the IEEE VLSI Symposium (2022)

This is paper T4-1: "First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory with Low Reset Current Density (~3 MA/cm2) and Low Resistance Drift (~0.002 at 105ºC)"

• Asir Khan's paper on flexible phase-change memory is out in Science Magazine and covered in a Stanford/Precourt press release (Sept. 2021)

IEEE Spectrum article: This Memory Tech is Better when It's Bendy

other good stories at Forbes, C&EN (Flexible Memory Uses Less Power) and at ScienceLine

additional coverage from EE Times, Physics World, Ars Technica, tom'sHARDWARE, and Stanford EE

also picked up by EurekAlert!, SCIENMAG, TechXplore, eurasiareview, MIRAGE News, The Hack Posts, NEWSBREAK, TechnoSports, MINNEWS, Aroged, Insider Voice, California18, sciencesprings.

• Asir Khan receives the Stanford Graduate Fellowship (2020-2023)