Our research centers around controlling charge, heat, and spin transport at the materials interfaces to enable energy-efficient electronic devices and systems. Our primary research areas include energy-efficient memory for AI, low resistance interconnects for scaled logic and memory, and thermal management for 3D stacked AI hardware.
Below are the latest representative publications and talks from our group that portrays our ongoing research efforts:
H. Gault, S.A. Iyengar, J. Shih, H. Tian, A. Patil, H. Kumar K, A. Ramdas, A. Sridhar, E. Piccinini, D. Cornigli, Z. Chen, V. Subbaraman, J. Lei, F. Nardi, H. Kim, H. Kwon, V. Deshpande, G. Thareja, A.I. Khan, “Materials Discovery to HBM Design: A Multiscale Framework for High-Thermal-Conductivity Room-Temperature Dielectrics,” IEEE International Electron Devices Meeting (IEDM), Paper 34-2 (2026).
S.A. Iyengar, P.Ajayan V. Meunier, T. Ghani, S. Salahuddin, A.I. Khan, “Electronic Materials Interfaces at the Forefront of Energy-Efficient Computing,” Nature Reviews Materials 11, 734–748 (2026).
S.A. Iyengar, M. Greenstein, L. Alers, J. Shih, H. Gault, S. Tsitrin, H.-M. Kim, D. Zhong, G. Pitner, I. Radu, A.I. Khan, "Stoichiometry- and Disorder-Controlled Transport in Atomic Layer-Deposited Topological Transition-Metal Pnictide Thin Films," MRS Fall Meeting, Dec. 2026, Boston, MA.
J. Shih, S.A. Iyengar, R. Rivers, P. Ajayan, H.-M. Kim, H. Kwon, A.I. Khan, “Interface-Controlled Thermal Transport in Room Temperature Sputtered AlN Thin Films,” MRS Fall Meeting, Dec 2026, Boston, MA.
