Below are the snapshots from some of our research efforts in low-power memory, unconventional topological transport, and thermal characterization. These projects span atomic-scale transport and interface engineering, materials innovation, and heterogeneous integration.
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Low-power Non-volatile Memory on Rigid and Flexible Substrates
Electro-thermal and materials interface engineering [1-4] enables low-power, fast switching, and high-endurance non-volatile memory technology on rigid [4,5] and flexible substrates [6].
[1] A.I. Khan et al., IEEE Electron Device Letters, 43, 204-207 (2022). [PDF]
[2] A.I. Khan et al., Nano Letters 22, 6285–6291 (2022). [PDF]
[3] H. Kwon, A.I. Khan et al., Nano Letters 21, 5984–5990 (2021). [PDF]
[4] X. Wu*, A.I. Khan*, Nature Communications 15, 13 (2024). [PDF]
[5] I.-K Oh*, A.I. Khan* et al., ACS Applied Materials and Interfaces 15, 43087–43093 (2023). [PDF]
[6] A.I. Khan et al., Science, 373, 1243-1247 (2021). [PDF]
New Electronic Materials for Low Resistance Transport
Surface-dominated transport in topological semimetals leading to low electrical resistivity and unconventional (unlike conventional metals) resistivity vs. thickness scaling trend [1].
[1] A.I. Khan et al., Science, 387, 62-67 (2025). [PDF]
Nanoscale Thermal Characterization and Management
Thermal transport characterization across various heterostructures and thin films e.g., chalcogenides, 2D, wide bandgap materials [1-6].
[1] M. Noshin, H. Kwon, A.I. Khan et al., Advanced Functional Materials 2403474 (2024). [PDF]
[2] J. Zhao, A.I. Khan et al., Nano Letters 23, 4587-4594 (2023). [PDF]
[3] H. Kwon, A.I. Khan et al., Nano Letters 21, 5984–5990 (2021). [PDF]
[4] A.I. Khan et al., Nano Letters 22, 6285–6291 (2022). [PDF]
[5] M. Noshin, A.I. Khan et al., Nanotechnology 29, 185706 (2018). [PDF]
[6] A.I. Khan et al., Applied Physics Letters, 116, 203105 (2020) [PDF]
Heterostructure Integration
Integration of various heterostructure to unlock new device functionality and overcome the limits of traditional devices
[1] A.I. Khan et al., Science 389, 508-511 (2025).
[2] L. Hoang, A.I. Khan et al., arXiv:2409.18926 (2025)
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